MOSFET
Description
FDT86244 N-Channel Shielded Gate PowerTrench® MOSFET
January 2016
FDT86244
N-Channel Shielded Gate PowerTrench® MOSFET
150 V, 2.8 A, 128 mΩ
Features
General Description
Shielded Gate MOSFET Technology
Max rDS(on) = 128 mΩ at VGS = 10 V, ID = 2.8 A Max rDS(on) = 178 mΩ at VGS = 6 V, ID = 2.4 A High Performance Trench Technology for Extremely Low
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Fairchild Semiconductor
FDT86244 PDF File
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