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FDT86244

Kexin

N-Channel Enhancement MOSFET - Kexin

FDT86244
FDT86244

PDF File FDT86244 PDF File


Description
SMD Type N-Channel Enhancement MOSFET FDT86244 MOSFET ■ Features ● VDS (V) = 150V ● ID = 2.
8 A (VGS = 10V) ● RDS(ON) ＜ 285mΩ (VGS = 10V) ● RDS(ON) ＜ 305mΩ (VGS = 6V) D GDS SOT-223 6.
50±0.
2 3.
00±0.
1 4 10 Unit:mm 7.
0±0.
3 3.
50±0.
2 1.
80 (max) 0.
02 ~ 0.
1 123 2.
30 (typ) 4.
60 (typ) 0.
70±0.
1 0.
250 Gauge Plane 1.
Gate 2.
Drain 3.
Source 4.
Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta=25℃ (Note.
1) Power Dissipation Ta=25℃ (Note.
1) Ta=25℃ (Note.
2) Single Pulsed Avalanche Energy (Note.
3) Thermal Resistance.
Junction- to-Ambient Thermal Resistance.
Junction- to-Case Junction Temperature Storage Temperature Range Symbol VDS VGS ID PD EAS RthJA RthJC TJ Tst g Rating 150 ±20 2.
8 12 2.
2 1.
0 12 55 12 150 -55 to 150 Note1: 55 °C/W when mounted on a 1 in 2 pad of 2 oz copper Note2: 118 °C/W when mounted on a minimum pad of 2 oz copper Note3: Starting TJ = 25 °C; N-ch: L = 1 mH, IAS = 5 A, VDD = 135 V, VGS = 10 V.
Unit V A W mJ ℃/W ℃ www.
kexin.
com.
cn 1 SMD Type MOSFET N-Channel Enhancement MOSFET FDT86244 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS Gate Threshold Voltage VGS(th) Static Drain-Source On-Resistance RDS(On) Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Maximum Body-Diode Continuous Current Diode Forward Voltage gFS Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf trr Qrr IS VSD Test Conditions ID=250μA, VGS=0V VDS=120V, VGS=0V VDS=0V, VGS=±20V VDS=VGS , ID=250μA VGS=10V, ID=2.
8A VGS=6V, ID=2.
4A VGS=10V, ID=2.
8A ,Tj = 125℃ VDS=10V, ID=2.
8A VGS=0V, VDS=75V, f=1MHz VGS=0 to 10V, VDS=75V, ID...


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