N-Channel MOSFET - ON Semiconductor
Description
MOSFET – N-Channel Shielded Gate POWERTRENCH)
150 V, 2.
8 A, 128 mW
FDT86244
Description This N−Channel MOSFET is produced using Fairchild onsemi
advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for RDS(on), switching performance and ruggedness.
Features
• Shielded Gate MOSFET Technology • Max RDS(on) = 128 mW at VGS = 10 V, ID = 2.
8 A • Max RDS(on) = 178 mW at VGS = 6 V, ID = 2.
4 A • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability in a Widely Used
Surface Mount Package
• Fast Switching Speed • 100% UIL Tested • These Devices are Pb−Free and are RoHS Compliant
Typical Applications
• Load Switch • Primary Switch
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Ratings Unit
VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current −Continuous TA = 25°C
(Note 1a)
150
V
20
V
2.
8
A
−Pulsed
12
EAS Single Pulse Avalanche Energy (Note 3) PD Power Dissipation TA = 25°C (Note 1a)
Power Dissipation TA = 25°C (Note 1b) TJ, TSTG Operating and Storage Junction
Temperature Range
12
mJ
2.
2
W
1.
0
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
DATA SHEET www.
onsemi.
com
SOT−223 CASE 318H
D
G
D
S
MARKING DIAGRAM
FSAXY 86244
1
Z XY 86244
= Assembly Plan Code = Date Code (Year & week) = Specific Device Code
ORDERING INFORMATION
Device FDT86244
Package
SOT−223 (Pb−Free)
Shipping†
4000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
1
September, 2022 − Rev 2
Publication Order Number: FDT86244/D
FDT86244
THERMAL CHARACTERISTICS
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