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2SD1608

Inchange Semiconductor

Power Transistor


Description
isc Silicon NPN Darlington Power Transistor 2SD1608 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 4A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium speed power switching applications. ABSOLUTE...



Inchange Semiconductor

2SD1608

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