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2SD1609

INCHANGE
Part Number 2SD1609
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 30, 2020
Detailed Description isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1609 DESCRIPTION ·High Collector-Emitter Breakdown Voltage-...
Datasheet PDF File 2SD1609 PDF File

2SD1609
2SD1609



Overview
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1609 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Good Linearity of hFE ·100% avalanche tested ·Complement to Type 2SB1109 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency and high-voltage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 160 UNIT V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.
1 A Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 12.
5 W 1.
25 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc website:www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1609 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 0.
1mA ; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Vltage IE=0.
1mA ; IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 30mA; IB= 3mA VBE(on) Base-Emitter Saturation Voltage IC= 10mA ; VCE= 5V ICBO Collector Cutoff Current VCB= 160V; IE= 0 hFE-1 DC Current Gain IC= 10mA ; VCE= 5V hFE-2 DC Current Gain IC= 1mA ; VCE= 5V fT Current-Gain—Bandwidth Product IC= 10mA ; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V, ftest= 1MHz MIN TYP.
MAX UNIT 160 V 160 V 5 V 2.
0 V 1.
5 V 10 μA 60 320 30 140 MHz 14 pF  hFE-1 Classifications B C D 60-120 100-200 160-320 isc website:www.
iscsemi.
com 2 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1609 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
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