DatasheetsPDF.com

2SD1609

UTC
Part Number 2SD1609
Manufacturer UTC
Published Apr 13, 2007
Description NPN TRANSISTOR
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 2SD1609 NPN SILICON TRANSISTOR NPN TRANSISTOR  DESCRIPTION The UTC 2SD1609 are serie...
Datasheet PDF File 2SD1609 PDF File

2SD1609
2SD1609


Overview
UNISONIC TECHNOLOGIES CO.
, LTD 2SD1609 NPN SILICON TRANSISTOR NPN TRANSISTOR  DESCRIPTION The UTC 2SD1609 are series of NPN silicon planar transistor, and its suited to be used in power amplifier applications.
 FEATURES * Suit for power amplifier applications  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD1609L-T60-K 2SD1609G-T60-K 2SD1609L-T60-T 2SD1609G-T60-T Note: Pin Assignment: B: Base C: Collector E: Emitter Package TO-126 TO-126 Pin Assignment 123 BCE BCE Packing Bulk Tube 2SD1609G-T60-K (1)Packing Type (2)Package Type (3)Green Package (1) K: Bulk, T: Tube (2) T60: TO-126 (3) G: Halogen Free and Lead Free, L: Lead Free  MARKING www.
unisonic.
com.
tw Copyright © 2018 Unisonic Technologies Co.
, Ltd 1 of 4 QW-R204-008.
B 2SD1609 NPN SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage BVCBO 160 V Collector-emitter voltage BVCEO 160 V Emitter-Base Voltage BVEBO 5 V Collector Current IC 100 mA Collector Dissipation PC 1.
25 W Junction Temperature TJ +150 °C Storage Temperature TSTG -50 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance SYMBOL BVCBO BVCEO BVEBO ICBO hFE1 hFE2 VCE(SAT) VBE(ON) fT COB TEST CONDITIONS IC=10μA, IE=0A IC=1mA, IB=0A IE=10μA, IC=0A VCB=140V, IE=0A IC=10mA, VCE=5V IC=1mA, VCE=5V IC=30mA, IB=3mA IC=10mA, VCE=5V IC=10mA, VCE=5V VCB=10V, f=1MHz MIN TYP MAX UNIT 160 V 160 V 5V 10 μA 60 320 30 2V 1.
5 V 145 MHz 3.
8 p...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)