2SC5829 Datasheet

2SC5829 Silicon NPN epitaxial planar type Transistor

Transistors 2SC5829 Silicon NPN epitaxial planar type For high speed switching ■ Features • Allowing the small current and low voltage operation • High transition frequency fT • Suitable for high-density mounting and downsizing of the equipment for Ultraminiature leadless package 0.6 mm × 1.0 mm (h.

Features

• Allowing the small current and low voltage operation
• High transition frequency fT
• Suitable for high-density mounting and downsizing of the equipment for Ultraminiature leadless package 0.6 mm × 1.0 mm (height 0.39 mm) 0.60±0.05 3 2 Unit: mm 1 1.00±0.05 0.39+0.01 −0.03 0.25±0.05 0.25±0.05 1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 10 7 2 10 50 150 −55 to +150 Unit V V V .