2SC5820

2SC5820 Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator REJ03G0758-0200 (Previous ADE-208-1604A) Rev.2.00 Aug.10.2005 Application High gain bandwidth product fT = 20 GHz typ. High power gain and low noise figure; PG = 17.5 dB typ., NF = 1.15 dB typ. at f = 1.8 GHz Outline RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK-4) 2 3 4 1 1. Emitter 2. Collector 3. Emitter 4. Base Note: Marking is “WU–“. Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage www.DataSheet4U.com Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 12 4.0 1.5 35 100 150 –55 to +150 Unit V V V mA mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 10 2SC5820 Electrical Characteristics (Ta = 25°C) Item Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure 3rd. Order Intercept Point Symbol ICBO ICEO IEBO hFE Cob fT PG NF IP3 Min    70  17 13   Typ    110 0.3 20 17.5 1.15 10 Max 1 1 10 150 0.6   1.7  Unit µA µA µA  pF GHz dB dB dBm Test conditions VCB = 12 V, IE = 0 VCE = 4 V, RBE = ∞ VEB = 1.5 V, IC = 0 VCE = 2 V, IC = 20 mA VCB = 2 V, IE = 0, f = 1 MHz VCE = 2 V, IC = 30 mA f = 2 GHz VCE = 2 V, IC = 30 mA, f = 1.8 GHz VCE = 2 V, IC = 5 mA, f = 1.8 GHz VCE = 2 V, IC = 5 mA, f = 1.8 GHz www.DataSheet4U....