2SC5824
Transistor
Power transistor (60V, 3A)
2SC5824
!Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) ...
2SC5824
Transistor
Power transistor (60V, 3A)
2SC5824
!Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation
voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2071. !External dimensions (Units : mm)
MPT3
1.0
1.5 0.4
4.0 2.5 0.5
(1)
(2)
3.0
0.5
(3)
1.5
0.4
1.6
!Applications NPN Silicon epitaxial planar transistor
(1)Base(Gate) (2)Collector(Drain) (3)Emitter(Sourse)
0.4
Each lead has same dimensions
Abbreviated symbol : UP
!Structure Low frequency amplifier High speed switching
!Packaging specifications
Package Type Code Basic ordering unit (pieces) 2SC5824 Taping T100 1000
!Absolute maximum ratings (Ta=25°C)
Parameter Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Symbol VCBO VCEO VEBO IC ICP PC Power dissipation PC Junction temperature Range of storage temperature
∗1 Pw=100ms ∗2 Each terminal mounted on a recommended land. ∗3 Mounted on a 40x40x0.7(mm) ceramic substrate
Limits 60 60 6 3 6 500 2.0 150 −55~+150
Unit V V V A A mW W °C °C
∗1 ∗2 ∗3
Tj Tstg
1.5
4.5
1/3
2SC5824
Transistor
!Electrical characteristics (Ta=25°C)
Parameter Collector−base breakdown
voltage Emitter−base breakdown
voltage Collector cut-off current Emitter cut-off current Collector−emitter staturation
voltage DC current gain Transition frequency Collector output capacitance Turn-on time Storage time Fall time Symbol BVCB...
