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Manufacture Part Number Description PDF
Motorola  Inc
Motorola Inc
2N7000 CASE 29-04/ STYLE 22 TO-92 (TO-226AA)
MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N7000/D

TMOS FET Transistor
N–Channel — Enhancement
3 DRAIN 2 GATE 1 SOURCE

2N7000
Motorola Preferred Device

MAXIMUM RATINGS
Rati
 pdf
NXP
NXP
2N7000 N-channel enhancement mode vertical D-MOS transistor
DISCRETE SEMICONDUCTORS

DATA SHEET

2N7000 N-channel enhancement mode vertical D-MOS transistor
Product specification File under Discrete Semiconductors, SC13b April 1995

Philips Semiconductors

Pr
 pdf
Supertex  Inc
Supertex Inc
2N7000 N-Channel Enhancement-Mode Vertical DMOS FET
Supertex inc.

2N7000

N-Channel Enhancement-Mode Vertical DMOS FETs

Features
►►Free from secondary breakdown ►►Low power drive requirement ►►Ease of paralleling ►►Low CISS and fast s
 pdf
TRSYS
TRSYS
2N7000 N-CHANNEL-ENHANCEMENT

 pdf
Vishay Siliconix
Vishay Siliconix
2N7000 N-Channel 60-V (D-S) MOSFET
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix

N-Channel 60-V (D-S) MOSFET

PRODUCT SUMMARY
Part Number
2N7000 2N7002 VQ1000J VQ1000P BS170 60

V(BR)DSS Min (V)

rDS(on) Max (W)
5 @ VGS = 10 V 7.5 
 pdf
Calogic  LLC
Calogic LLC
2N7000 N-Channel Enhancement-Mode MOS Transistor
N-Channel Enhancement-Mode MOS Transistor
CORPORATION

2N7000 / BS170L
DESCRIPTION The 2N7000 utilizes Calogic’s vertical DMOS technology. The device is well suited for switching applications where 
 pdf
General Semiconductor
General Semiconductor
2N7000 DMOS Transistors (N-Channel)
2N7000
DMOS Transistors (N-Channel)
TO-92
.181 (4.6) min. .492 (12.5) .181 (4.6) .142 (3.6)

FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦
High input impedance Low gate threshold voltage Low drain-source O
 pdf
ST Microelectronics
ST Microelectronics
2N7000 (2N7000 / 2N7002) N-Channel MOSFET


2N7000 2N7002
N-CHANNEL 60V - 1.8Ω - 0.35A SOT23-3L - TO-92 STripFET™II MOSFET
Table 1: General Features
TYPE 2N7000 2N7002
Q Q Q

Figure 1: Package
RDS(on) Id 0.35 A 0.20 A
3 
 pdf
ON Semiconductor
ON Semiconductor
2N7000 N-Channel TO-92 200 mAMPS 60 VOLTS


2N7000
Preferred Device

Small Signal MOSFET 200 mAmps, 60 Volts
N−Channel TO−92
Features http://onsemi.com

• Pb−Free Packages are Available*

MAXIMUM RATINGS
Rating Drai
 pdf
UTC
UTC
2N7000 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
UTC 2N7000
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DESCRIPTION
The UTC 2N7000 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performanc
 pdf


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