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2N7000

KEC
Part Number 2N7000
Manufacturer KEC
Description N-Channel MOSFET
Published Jul 10, 2017
Detailed Description SEMICONDUCTOR TECHNICAL DATA INTERFACE AND SWITCHING APPLICATION. FEATURES High density cell design for low RDS(ON). Vol...
Datasheet PDF File 2N7000 PDF File

2N7000
2N7000

Overview
SEMICONDUCTOR TECHNICAL DATA INTERFACE AND SWITCHING APPLICATION.
FEATURES High density cell design for low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capablity.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed(Note 1) Drain Power Dissipation Junction Temperature VDSS VGSS ID IDP PD Tj Storage Temperature Range Tstg Note 1) Pulse Width 10 , Duty Cycle 1% RATING 60 20 500 2000 625 150 -55 150 UNIT V V mA mW L M C 2N7000 N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR BC JA KE G D H FF 1 23 N DIM MILLIMETERS A 4.
70 MAX B 4.
80 MAX C 3.
70 MAX D 0.
45 E 1...


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