Silicon N-Channel IGBT
Description
Preliminary Datasheet
RJP60D0DPK
Silicon N Channel IGBT High Speed Power Switching
Features
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding R07DS0166EJ0300 Rev.3.00 Jul 13, 2011
Out...
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