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RJP60D0DPP-M0

Part Number	RJP60D0DPP-M0
Manufacturer	Renesas Technology
Title	Silicon N-Channel IGBT
Description	of circuits, software and other related information in this document are provided only to illustrat...
Features	 Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 ...
Published	Aug 8, 2011
Datasheet	RJP60D0DPP-M0 PDF File

Features

 Short circuit withstand time (5 s typ.)
 Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)
 Gate to emitter voltage rating 30 V
 Pb-free lead plating and chip bonding R07DS0173EJ0100 Rev.1.00 ...

Similar Datasheet

RJP60D0DPP-M0 Silicon N-Channel IGBT - Renesas Technology

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