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K1316 Datasheet

Part Number K1316
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description 2SK1316
Datasheet K1316 DatasheetK1316 Datasheet (PDF)

  K1316   K1316
2SK1315(L)(S), 2SK1316(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Outline LDPAK 4 4 123 D 12 3 G S 1. Gate 2. Drain 3. Source 4. Drain 2SK1315(L)(S), 2SK1316(L)(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1315 2SK1316 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I *1 D(pulse) I DR Pch*2 Tch Tstg Ratings 450 500 ±30 8 32 8 60 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1315(L)(S), 2SK1316(L)(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage 2SK1315 V(BR)DSS 2SK1316 450 500 Gate to source breakdown voltage.






Part Number K1317
Manufacturers Renesas
Logo Renesas
Description Silicon N-Channel MOSFET
Datasheet K1316 DatasheetK1317 Datasheet (PDF)

  K1316   K1316
2SK1317 Silicon N Channel MOS FET Application High speed power switching Features • High breakdown voltage VDSS = 1500 V • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 1 2 3 G REJ03G0929-0200 (Previous: ADE-208-1268) Rev.2.00 Sep 07, 2005 D 1. Gate 2. Drain (Flange) 3. Source S Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1317 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes.






Part Number K1317
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description 2SK1317
Datasheet K1316 DatasheetK1317 Datasheet (PDF)

  K1316   K1316
2SK1317 Silicon N-Channel MOS FET Application www.DataSheet4U.com High speed power switching Features • • • • • High breakdown voltage V DSS = 1500 V High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1317 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% www.DataSheet4U.com 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR.






Part Number K1315
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description 2SK1316
Datasheet K1316 DatasheetK1315 Datasheet (PDF)

  K1316   K1316
2SK1315(L)(S), 2SK1316(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Outline LDPAK 4 4 123 D 12 3 G S 1. Gate 2. Drain 3. Source 4. Drain 2SK1315(L)(S), 2SK1316(L)(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1315 2SK1316 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID.






Part Number K1310A
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description N-Channel MOSFET
Datasheet K1316 DatasheetK1310A Datasheet (PDF)

  K1316   K1316
2SK1310A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1310A RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER z Output Power : Po ≥ 190 W (Min.) z Drain Efficiency : ηD = 65% (Typ.) z Frequency : f = 230 MHz z Push−Pull Structure Package Unit in mm ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage Gate-Source Voltage Drain Current Reverse Drain Current Drain Power Dissipation Channel Temperature Storage Temperature Range VDSS VGSS ID IDR PD Tch Tstg 100 ±20 12 12 250 150 −55~150 V V A A W °C °C Note: Using continuously under heavy loads (e.g. the application of high JEDEC — temperature/current/voltage and the si.






2SK1316

2SK1315(L)(S), 2SK1316(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Outline LDPAK 4 4 123 D 12 3 G S 1. Gate 2. Drain 3. Source 4. Drain 2SK1315(L)(S), 2SK1316(L)(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1315 2SK1316 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I *1 D(pulse) I DR Pch*2 Tch Tstg Ratings 450 500 ±30 8 32 8 60 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1315(L)(S), 2SK1316(L)(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage 2SK1315 V(BR)DSS 2SK1316 450 500 Gate to source breakdown voltage V(BR)GSS ±30 Gate to source leak current I GSS Zero gate voltage 2SK1315 IDSS drain current 2SK1316 — — Gate to source cutoff voltage VGS(off) Static Drain to source 2SK1315 RDS(on) on state resistance 2SK1316 2.0 — — Forward transfer admittance |yfs| 4.5 Input capacitance Ciss — Output capacitance Coss — Reverse transfer capacitance Crss — Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage t d(on) tr t d(off) tf VDF — — — — — Body.



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