2SK1316 - Hitachi Semiconductor
Description
2SK1315(L)(S), 2SK1316(L)(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver
Outline
LDPAK
4
4
123 D
12 3
G S
1.
Gate 2.
Drain 3.
Source 4.
Drain
2SK1315(L)(S), 2SK1316(L)(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SK1315
2SK1316
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at TC = 25°C
Symbol VDSS
VGSS ID I *1
D(pulse)
I DR Pch*2 Tch Tstg
Ratings 450 500 ±30 8 32 8 60 150 –55 to +150
Unit V
V A A A W °C °C
2
2SK1315(L)(S), 2SK1316(L)(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage
2SK1315 V(BR)DSS 2SK1316
450 500
Gate to source breakdown voltage
V(BR)GSS ±30
Gate to source leak current
I GSS
Zero gate voltage 2SK1315 IDSS
drain current
2SK1316
— —
Gate to source cutoff voltage VGS(off) Static Drain to source 2SK1315 RDS(on) on state resistance 2SK1316
2.
0 — —
Forward transfer admittance |yfs|
4.
5
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage
t d(on) tr t d(off) tf VDF
— — — — —
Body to drain diode reverse recovery time
t rr
—
Note: 1.
Pulse test
Typ Max Unit ——V
——V
— ±10 µA — 250 µA
— 0.
55 0.
60 7.
5 1150 340 55 17 55 100 45 0.
9
3.
0 0.
7 0.
8 — — — — — — — — —
350 —
V Ω
S pF pF pF ns ns ns ns V
ns
Test conditions ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 4 A, VGS = 10 V *1
ID = 4 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz
ID = 4 A, VGS = 10 V, RL = 7.
5 Ω
IF = 8 A, VGS = 0
...
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