K1304 Datasheet
Part Number |
K1304 |
Manufacturers |
Renesas Technology |
Logo |
|
Description |
2SK1304 |
Datasheet |
K1304 Datasheet (PDF) |
www.DataSheet4U.com
2SK1304
Silicon N Channel MOS FET
REJ03G0923-0200 (Previous: ADE-208-1262) Rev.2.00 Sep 07, 2005
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive • • • •
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D G 1. Gate 2. Drain (Flange) 3. Source
1
S 2 3
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1304
www.DataSheet4U.com
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID ID(pulse) IDR Pch Tch
*1
Ratings 100 ±20 40 160 40 100 150 –55 to +150
Unit V V A A A W
*2
Tstg
°C °C
Electrical Characteristics
(Ta = 25°C)
Item.
Part Number |
K1307 |
Manufacturers |
Hitachi Semiconductor |
Logo |
|
Description |
2SK1307 |
Datasheet |
K1307 Datasheet (PDF) |
www.DataSheet.co.kr
2SK1307
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-220FM
D G
1
2 3
1. Gate 2. Drain 3. Source
S
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
2SK1307
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25.
Part Number |
K1306 |
Manufacturers |
Hitachi Semiconductor |
Logo |
|
Description |
2SK1306 |
Datasheet |
K1306 Datasheet (PDF) |
2SK1306
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-220FM
D G
1
2 3
1. Gate 2. Drain 3. Source
S
2SK1306
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings .
Part Number |
K1305 |
Manufacturers |
Renesas |
Logo |
|
Description |
Silicon N-Channel MOSFET |
Datasheet |
K1305 Datasheet (PDF) |
2SK1305
Silicon N Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • 4 V gate drive device
Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM)
D
G
12 3
S
REJ03G0924-0200 (Previous: ADE-208-1263)
Rev.2.00 Sep 07, 2005
1. Gate 2. Drain 3. Source
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1305
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage t.
2SK1305
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • 4 V gate drive device
Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-220FM
D 12 3 1. Gate
G 2. Drain 3. Source
S
2SK1305
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Symbol VDSS VGSS ID I *1
D(pulse)
I DR Pch*2 Tch Tstg
Ratings 100 ±20 .
2SK1304
www.DataSheet4U.com
2SK1304
Silicon N Channel MOS FET
REJ03G0923-0200 (Previous: ADE-208-1262) Rev.2.00 Sep 07, 2005
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive • • • •
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D G 1. Gate 2. Drain (Flange) 3. Source
1
S 2 3
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1304
www.DataSheet4U.com
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID ID(pulse) IDR Pch Tch
*1
Ratings 100 ±20 40 160 40 100 150 –55 to +150
Unit V V A A A W
*2
Tstg
°C °C
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(.
2010-10-05 : 1516BQ SIDC81D120E6 SIDC81D120F6 SIDC81D120H6 SIDC81D60E6 K1304 W25Q16 W25Q32 W25Q80