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K1306

Part Number	K1306
Manufacturer	Hitachi Semiconductor
Description	2SK1306
Published	Oct 21, 2014
Detailed Description	2SK1306 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed...
Datasheet	K1306 PDF File

Overview

2SK1306 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D G 1 2 3 1.
Gate 2.
Drain 3.
Source S 2SK1306 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings ...

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