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H5N2508DS
Silicon N Channel MOS FET High Speed Power Switching
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H5N2508DL, H5N2508DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1108-0200 (Previous: ADE-208-1377) Rev.2.00 Sep 07, 2005 Features www.DataSheet4U.com Low Low on-resistance: R DS (on) = 0.48 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 250 V) High speed switching: tf = 11 ns typ (at VGS = 10 V, VDD = 125 V, ID = 3.5 A) Low gate ...
Renesas Technology
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H5N2508DL
Silicon N Channel MOS FET High Speed Power Switching
- Renesas Technology
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