Part Number | H5N2508DL |
Manufacturer | Renesas Technology |
Description | Silicon N Channel MOS FET High Speed Power Switching |
Features | .. • Low • Low on-resistance: R DS (on) = 0.48 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 250 V... |
Published | Nov 20, 2008 |
Datasheet | H5N2508DL PDF File |