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BD721

Inchange Semiconductor Company
Part Number BD721
Manufacturer Inchange Semiconductor Company
Description Silicon NPN Power Transistor
Published Dec 14, 2009
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 40@ IC= 0.5A ·Collector-Emitter Breakdown Voltage...
Datasheet PDF File BD721 PDF File

BD721
BD721

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 40@ IC= 0.
5A ·Collector-Emitter Breakdown Voltage - : V(BR)CEO= 80V(Min) ·Complement to type BD722 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output and general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 80 VCEO Collector-Emitter Voltage 80 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 4 ICM Collector Current-Peak 7 IB Base Current-Continuous 1 PC Collector Power Dissipation @ TC=25℃ 36 TJ Junction Temperature 150 Tstg Storage ...


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