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BD726

Part Number	BD726
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 22, 2020
Detailed Description	isc Silicon PNP Power Transistor BD726 DESCRIPTION ·DC Current Gain- : hFE= 40@ IC= -0.5A ·Collector-Emitter Breakdown...
Datasheet	BD726 PDF File

Overview

isc Silicon PNP Power Transistor BD726 DESCRIPTION ·DC Current Gain- : hFE= 40@ IC= -0.
5A ·Collector-Emitter Breakdown Voltage - : V(BR)CEO= -120V(Min) ·Complement to type BD725 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output and general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -120 VCEO Collector-Emitter Voltage -120 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -4 ICM Collector Current-Peak -7 IB Base Current-Continuous -1 PC Collector Power Dissipation @ TC=25℃ 36 TJ Junction Temperature 1...

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