Silicon N Channel MOS FET High Speed Power Switching
Description
4AK19
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-727 (Z) 1st. Edition February 1999 Features
Low on-resistance N Channel: R DS(on) ≤ 0.5 Ω, VGS = 10 V, ID = 2.5 A R DS(on) ≤ 0.6 Ω, VGS = 4 V, ID = 2.5 A 4 V gate drive devices. High density mounting
Outline
SP-10
3 D 2G 4 G
5 D 6 G
7 D 8 G
9 D
12 34 56 78 9 10
1 S
S 10
1, 10...
