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4AK15

Hitachi Semiconductor
Part Number 4AK15
Manufacturer Hitachi Semiconductor
Description Silicon N-Channel Power MOS FET Array
Published Apr 1, 2005
Detailed Description 4AK15 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(o...
Datasheet PDF File 4AK15 PDF File

4AK15
4AK15

Overview
4AK15 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.
07 , VGS = 10 V, I D = 8 A R DS(on) ≤ 0.
095 , VGS = 4 V, I D = 8 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Suitable for motor driver, solenoid driver and lamp driver 4AK15 Outline SP-10 3 D 4 G 2G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1S S 10 1, 10.
Source 2, 4, 6, 8.
Gate 3, 5, 7, 9.
Drain Absolute Maximum Ratings (Ta = 25°C) (1 Unit) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
4 devices operation Symbol VDSS VGSS ID I D(pulse)* I DR Pch (Tc = 25°C)* Pch* Tch Tstg 2 2 1 Rating ±60 ±20 8 32 8 28 4 150 –55 to +150 Unit V V A A A W W °C °C 2 4AK15 Electrical Characteristics (Ta = 25°C) (1 Unit) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 60 ±20 — — 1.
0 — — Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1.
Pulse test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 7 — — — — — — — — — Typ — — — — — 0.
055 0.
075 12 860 450 140 10 70 180 120 1.
05 110 Max — — ±10 250 2.
0 0.
07 0.
095 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = 8 A, VGS = 0 I F = 8 A, VGS = 0 dIF/dt = 50 A/µs Test conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 50 V, VGS = 0 I D = 1 mA, VDS = 10 V ID = 8 A VGS = 10 V*1 ID = 8 A VGS = 4 V*1 ID = 8 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz ID = 8 A VGS = 10 V RL = 3.
75 Ω Zero gate voltage drain current I DSS Gate to sour...


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