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3DD56

NPN silicon low-frequency high-power transistors

Description

3DD56/3DD57 NPN ABCDE F PCM TC=75℃ 10 W ICM Tjm Tstg Rth VCE=10V IC=0.2A 3 175 -55~150 10 A ℃ ℃ ℃/W V(BR)CBO ICB=3mA ≥30 ≥50 ≥80 ≥110 ≥150 ≥200 V V(BR)CEO ICE=3mA ≥30 ≥50 ≥80 ≥110 ≥150 ≥200 V V(BR)EBO IEB=5mA ≥5.0 V ICBO VCB=20V ≤0.5 mA ICEO IEBO VBEsat VCEsat VCE=20V VEB=4V IC=0.75A IB=0.15A ≤1.0 ≤0.5 ≤1.0 ≤1....

ETC

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