DatasheetsPDF.com

3DD5E

Part Number	3DD5E
Manufacturer	Inchange
Description	Silicon NPN Power Transistor
Published	May 8, 2021
Detailed Description	isc Silicon NPN Power Transistor 3DD5E DESCRIPTION ·Excellent safe operating area ·Low Collector-Emitter Saturation Vo...
Datasheet	3DD5E PDF File

Overview

isc Silicon NPN Power Transistor 3DD5E DESCRIPTION ·Excellent safe operating area ·Low Collector-Emitter Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=75℃ TJ Junction Temperature 3 A 30 W 150 ℃ Tstg Storage Temperature Range -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.
52 ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 3mA; IB=...

Similar Datasheet

3DD10 NPN Silicon Low Frequency High Power Transistor - Shaanxi Qunli Electric
3DD100 NPN Silicon Low Frequency High Power Transistor - Shaanxi Qunli Electric
3DD100A NPN Transistor - INCHANGE
3DD100B NPN Transistor - INCHANGE
3DD100C NPN Transistor - INCHANGE
3DD100D NPN Transistor - INCHANGE
3DD100E NPN Transistor - INCHANGE
3DD101 NPN Silicon Low Frequency High Power Transistor - Shaanxi Qunli Electric
3DD101A Power Transistor - SJ
3DD101A Silicon NPN Power Transistor - Inchange Semiconductor

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)