DatasheetsPDF.com
3DD102A
Silicon NPN Power Transistor
Description
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown
Voltage
- : V(BR)CEO= 100V(Min.) ·DC Current Gain- : hFE= 20(Min.)@IC= 2A ·Collector-Emitter Saturation
Voltage
- : VCE(sat)= 0.8V(Max)@ IC= 2.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier , DC Transfor...
Inchange Semiconductor
Download 3DD102A Datasheet
Similar Datasheet
3DD102D
NPN Transistor
- INCHANGE
3DD102C
Silicon NPN Power Transistor
- Inchange Semiconductor
3DD102B
Silicon NPN Power Transistor
- Inchange Semiconductor
3DD102
NPN Silicon Low Frequency High Power Transistor
- Shaanxi Qunli Electric
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (
Privacy Policy & Contact
)