DatasheetsPDF.com

3DD102B

Part Number	3DD102B
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Jun 18, 2016
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD102B DESCRIPTION ·Collector-Emitt...
Datasheet	3DD102B PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD102B DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.
) ·DC Current Gain- : hFE= 20(Min.
)@IC= 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.
8V(Max)@ IC= 2.
5A APPLICATIONS ·Designed for power amplifier,DC-DC converter and regulated power supply applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 4V IC Collector Current-Continuous 5A PC Collector Power Dissipation@TC=75℃ 50 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature -55~175...

Similar Datasheet

3DD10 NPN Silicon Low Frequency High Power Transistor - Shaanxi Qunli Electric
3DD100 NPN Silicon Low Frequency High Power Transistor - Shaanxi Qunli Electric
3DD100A NPN Transistor - INCHANGE
3DD100B NPN Transistor - INCHANGE
3DD100C NPN Transistor - INCHANGE
3DD100D NPN Transistor - INCHANGE
3DD100E NPN Transistor - INCHANGE
3DD101 NPN Silicon Low Frequency High Power Transistor - Shaanxi Qunli Electric
3DD101A Power Transistor - SJ
3DD101A Silicon NPN Power Transistor - Inchange Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)