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2SJ106

Part Number	2SJ106
Manufacturer	Toshiba Semiconductor
Description	P-Channel MOSFET
Published	Mar 30, 2005
Detailed Description	2SJ106 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ106 Audio Frequency Amplifier Applications A...
Datasheet	2SJ106 PDF File

Overview

2SJ106 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ106 Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications Unit: mm • High breakdown voltage: VGDS = 50 V • High input impedance: IGSS = 1.
0 nA (max) (VGS = 30 V) • Low RDS (ON): RDS (ON) = 270 Ω (typ.
) (IDSS = −5 mA) • Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating 50 −10 150 125 −55~125 Unit V mA mW °C °C Note: Using continuously under heavy loads (e.
g.
the application of high tem...

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