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2SJ105

Toshiba Semiconductor
Part Number 2SJ105
Manufacturer Toshiba Semiconductor
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ105 For Audio Amplifier, Analog Switch, Constant Curr...
Datasheet PDF File 2SJ105 PDF File

2SJ105
2SJ105

Overview
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ105 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SJ105 Unit: mm · High breakdown voltage: VGDS = 50 V · High input impedance: IGSS = 1.
0 nA (max) (VGS = 30 V) · Low RDS (ON): RDS (ON) = 270 Ω (typ.
) (IDSS = −5 mA) · Complimentary to 2SK330 · Small package Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating 50 -10 200 125 -55~125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-4E1B Weight: 0.
13 g (typ.
) C...


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