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2SD929
NPN Transistor
Description
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD929 DESCRIPTION ·High DC Current Gain : hFE= 700(Min.)@ IC= 1A, VCE= 4V ·High Collector-Emitter Breakdown
Voltage
- : V(BR)CEO = 180V(Min) ·High Reliability ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable opera...
INCHANGE
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