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2SD920

Part Number	2SD920
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 29, 2020
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD920 DESCRIPTION ·High DC Current Gain : hFE= 70...
Datasheet	2SD920 PDF File

Overview

...0(Min.
)@ IC= 1A, VCE= 4V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 200V(Min) ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for series regulators ,color TV, power supplies and similar devices applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 8 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc w...

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