Power Transistors
2SD2133
Silicon NPN epitaxial planar type
For low-frequency power amplification driver
7.5±0.2
Unit: mm
4.5±0.2
Low collector-emitter saturation voltage VCE(sat)
10.8±0.2
0.65±0.1
16.0±1.0
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage ...
