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2SD2137A

Part Number	2SD2137A
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 5, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Silicon NPN triple diffusion planar type ·Complementary to 2SB1417A ·Low ...
Datasheet	2SD2137A PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Silicon NPN triple diffusion planar type ·Complementary to 2SB1417A ·Low Collector to Emitter Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Allowing supply with the radial taping APPLICATIONS ·Designed for power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Pulse 5 A Total Power Dissipation @TC=25℃ 15 PT W Total Power Dissipation @Ta=25℃ 2 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD2137A isc website： www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD2137A ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage I...

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