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2SD2082
Silicon NPN Transistor
Description
Darlington 2SD2082 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=10mA VCE=4V, IC=8A IC=8A, IB=16mA IC=8A, IB=16mA VCE=12V, IE=–1A VCB=10V, f=1MHz 2SD2082 10max 10max 120min 2000min 1.5max 2.5max 20typ 210typ V V 16.2 Equivalent circuit B C (2k Ω) (100 Ω) E Silicon NPN Triple Diffused Pla...
Sanken electric
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