isc
Silicon NPN Darlington
Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 120V(Min) ·High DC Current Gain-
: hFE= 2000( Min.) @(IC= 8A, VCE= 4V) ·Low Collector Saturation
Voltage-
: VCE(sat)= 1.5V(Max)@ (IC= 8A, IB= 1...