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2SD1564
NPN Transistor
Description
isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD1564 DESCRIPTION ·Low Collector-Emitter Saturation
Voltage
- : VCE(sat)= 1.5V(Max) @IC= 2A ·High DC Current Gain : hFE= 2000(Min) @IC= 2A ·Low Saturation
Voltage
·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Design...
INCHANGE
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