isc
Silicon NPN Darlington
Power Transistor
2SD1565
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 100V(Min) ·High DC Current Gain-
: hFE= 2000(Min)@ (VCE= 2V, IC= 2A) ·Minimum Lot-to-Lot variations for robust device
performance and ...