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2SD1223

Part Number	2SD1223
Manufacturer	Toshiba Semiconductor
Description	NPN TRANSISTOR
Published	Apr 3, 2005
Detailed Description	2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington) 2SD1223 Switching Applications Hammer ...
Datasheet	2SD1223 PDF File

Overview

2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • • • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Low saturation voltage: VCE (sat) = 1.
5 V (max) (IC = 3 A) Complementary to 2SB908.
Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 100 80 5 4 0.
4 1.
0 15 150 −55 to 150 Unit V V V A A JEDE...

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