INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1223
DESCRIPTION ·High DC Current Gain-
: hFE = 2000(Min)@ IC= 4A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 80V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1. 5V(Max)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general-purpose amplifier and low-speed
switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
IB
Base Current
Collector Power Dissipation
PC
TC=25℃ Collector Power Dissipation
Ta=25℃
Tj
Junction Temperature
0. 4
A
15 W
1
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 8. 33 ℃/W
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1223
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA, IB= 0
VCE(sat)
Collector-Emitter Saturation Voltage IC= 3A ,IB= 6mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A ,IB= 6mA
ICBO
Collector Cutoff Current
VCB= 100V, IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 2V
hFE-2
DC Current Gain
IC= 3. 0A; VCE= 2V
MIN TYP. MAX UNIT
80
V
1. 5
V
2
V
20
uA
2. 5 mA
2000
1000
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require special...