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2SD1157
Silicon NPN Power Transistor
Description
isc Silicon NPN Power Transistor 2SD1157 DESCRIPTION ·Collector-Emitter Breakdown
Voltage
- : V(BR)CEO= 50V(Min) ·High DC Current Gain- : hFE= 250V(Min.) @IC= 0.5A ·Low Collector Saturation
Voltage
·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·DC-DC converter ·Solid ...
Inchange Semiconductor
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