isc
Silicon NPN
Power Transistor
2SD1159
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 60V(Min) ·Low Collector-Emitter Saturation
Voltage-
: VCE(sat)= 1.0V(Max) @IC= 4A ·Minimum Lot-to-Lot variations for robust device
performance an...