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2SA2056

Part Number	2SA2056
Manufacturer	Toshiba Semiconductor
Description	Silicon PNP Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2056 High-Speed Switching Applications DC-DC Converter Applications Str...
Datasheet	2SA2056 PDF File

Overview

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2056 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 200 to 500 (IC = −0.
5 A) • Low collector-emitter saturation voltage: VCE (sat) = −0.
2 V (max) • High-speed switching: tf = 90 ns (typ.
) 2SA2056 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −7 V Collector current Base current Collector power dissipation DC Pulse t = 10 s DC IC −2.
0 A ICP −3.
5 IB −200 mA PC 1000 mW (Note 1) 625 JEDEC JEITA TOSHIBA ― ― 2-3S1C Junction tempe...

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