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2SA2058

Part Number	2SA2058
Manufacturer	Toshiba Semiconductor
Description	Silicon PNP Transistor
Published	Mar 22, 2005
Detailed Description	2SA2058 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2058 High-Speed Switching Applications DC-DC Converter Applica...
Datasheet	2SA2058 PDF File

Overview

2SA2058 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2058 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • • • High DC current gain: hFE = 200 to 500 (IC = −0.
2 A) Low collector-emitter saturation voltage: VCE (sat) = −0.
19 V (max) High-speed switching: tf = 25 ns (typ.
) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC t = 10 s DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC (Note) Tj Tstg Rating −20 −10 −7 −1.
5 −2.
5 −150 500 750 150 −55 to 150 Unit V V V A mA mW °C °C JEDE...

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