Home >> 2N3906 Search >> 2N3906 Datasheet

(PDF) 2N3906 Datasheet Download



Manufacture Part Number Description Mobile PC
NTE
NTE
2N3906 Silicon PNP Transistor
2N3905 & 2N3906 Silicon PNP Transistor General Purpose TO92 Type Package
Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, I C . . . . . . . . . . . . . . 
2N3906 mobile view 2N3906 pdf
NXP
NXP
2N3906 PNP switching transistor
DISCRETE SEMICONDUCTORS

DATA SHEET
book, halfpage

M3D186

2N3906 PNP switching transistor
Product specification Supersedes data of 1997 Jun 20 1999 Apr 23

Philips Semiconductors

Product specification

PNP switching transistor
FEATURES • Low current (max. 200 mA) • Low voltage (max. 40 V). APPLICATIONS • High-speed switching in industrial applications. DESCRIPTION PNP switching transistor in a TO-92; SOT54 plastic package. NPN complement: 2N3904. PINNING PIN 1 2 3 collector base emitter

2N3906

DESCRIPTION

1 handbook, halfpage

2 3

1 2 3

MAM280

Fig.1

Simplified outline (TO-92;
2N3906 mobile view 2N3906 pdf
TRSYS
TRSYS
2N3906 PNP SMALL SIGNAL TRANSISTOR

2N3906 mobile view 2N3906 pdf
Fairchild Semiconductor
Fairchild Semiconductor
2N3906 PNP General Purpose Amplifier
2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier

April 2014

2N3906 / MMBT3906 / PZT3906 PNP General-Purpose Amplifier
Description
This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA.

2N3906

EBC

TO-92

MMBT3906
C

SOT-23
Mark:2A

E B

PZT3906
C

SOT-223

E
C B

Ordering Information

Part Number 2N3906BU 2N3906TA 2N3906TAR 2N3906TF 2N3906TFR MMBT3906 PZT3906

Marking 2N3906 2N3906 2N3906 2N3906 2N3906
2A 3906

Package TO-92 3L TO-92 3L TO-92 3L TO-92 3L TO-92 3L SOT-23 3L SOT-223 4L

Packing Method Bulk Ammo 
2N3906 mobile view 2N3906 pdf
General Semiconductor
General Semiconductor
2N3906 SMALL SIGNAL TRANSISTORS PNP
NEW PRODUCT

NEW PRODUCT

NEW PRODUCT

2N3906
SMALL SIGNAL TRANSISTORS (PNP)
TO-92
0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6)

FEATURES
¨ PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. ¨ As complementary type, the NPN transistor 2N3904 is recommended. ¨ On special request, this transistor is also manufactured in the pin configuration TO-18. ¨ This transistor is also available in the SOT-23 case with the type designation MMBT3906.

max. Æ 0.022 (0.55) 0.098 (2.5)

E

C

B

MECHANICAL DATA
Case: TO-92 Plastic Package Weight: approx. 0.18g

Dimen
2N3906 mobile view 2N3906 pdf
KEC(Korea Electronics)
KEC(Korea Electronics)
2N3906 EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE/ SWITCHING)

2N3906 mobile view 2N3906 pdf
Micro Commercial Components
Micro Commercial Components
2N3906 PNP General Purpose Amplifier
MCC
Features
• •

	
omponents 21201 Itasca Street Chatsworth  	 !"# $
%    !"#

2N3906

Through Hole Package Capable of 600mWatts of Power Dissipation
Pin Configuration Bottom View

PNP General Purpose Amplifier
TO-92
A E

C

B

E

Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol Parameter Collector-Emitter Breakdown Voltage* (I C=1.0mAdc, IB=0) Collector-Base Breakdown Voltage (I C=10µ Adc, IE=0) Emitter-Base Breakdown Voltage (I E=10µ Adc, IC=0) Base Cutoff Current (VCE=30Vdc, VBE=3.0Vdc) Collector Cutoff Current
2N3906 mobile view 2N3906 pdf
Rohm
Rohm
2N3906 PNP General Purpose Transistor

2N3906 mobile view 2N3906 pdf
ON Semiconductor
ON Semiconductor
2N3906 General Purpose Transistors
2N3906
General Purpose Transistors
PNP Silicon
Features
• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating

Symbol Value

Unit

Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C
Derate above 25°C

VCEO VCBO VEBO
IC PD

40 Vdc 40 Vdc 5.0 Vdc 200 mAdc 625 mW 5.0 mW/°C

Total Power Dissipation @ TA = 60°C PD 250 mW

Total Device Dissipation @ TC = 25°C Derate above 25°C

PD

1.5 W 12 mW/°C

Operating and Storage Junction Temperature Range

TJ, Tstg −55 to +150

°C

THERMAL C
2N3906 mobile view 2N3906 pdf
Micro Electronics
Micro Electronics
2N3906 PNP SILICON PLANAR EPITAXIAL TRANSISTORS

2N3906 mobile view 2N3906 pdf


                                   NEXT > 


Searches related to 2N3906 part

Find Chips chip 1 stop Newark verical
Digi-Key AVNET ARROW FUTURE ELECTRONICS
ALLIED ELECTRONICS IC Base online components bisco ind
Rochester Electronics MOUSER Quest Components Datasheets360
Freelance Electronics Sager Electronics Terminals & Connectors TTI

0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z
@ 2014 :: DatasheetsPDF.com :: Semiconductors Datasheet Search & Download Site