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2N3906

Part Number	2N3906
Manufacturer	ON Semiconductor
Description	PNP General-Purpose Amplifier
Published	Mar 23, 2005
Detailed Description	2N3906 General Purpose Transistors PNP Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collec...
Datasheet	2N3906 PDF File

Overview

2N3906 General Purpose Transistors PNP Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Symbol VCEO VCBO VEBO IC PD Value 40 40 5.
0 200 625 5.
0 Unit Vdc Vdc Vdc mAdc mW mW/°C Total Power Dissipation @ TA = 60°C PD 250 mW Total Device Dissipation @ TC = 25°C PD Derate above 25°C 1.
5 W 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS (Note 1) Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Th...

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