2SD1898 Datasheet

2SD1898 NPN Epitaxial Planar Silicon Transistor

Elektronische Bauelemente 2SD1898 1A , 100V NPN Epitaxial Planar Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE High Breakdown Voltage and Current Excellent DC Current Gain Linearity Low Collector-Emitter Saturation Voltage CLASSIFICATION OF hFE Product .

Features

Junction & Storage temperature TJ, TSTG Ratings 100 80 5 1 0.5 250 150, -55~150 Unit V V V A W °C/ W °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Collector-base breakdown voltage V(BR)CBO 100 - - Collector-emitter breakdown voltage V(BR)CEO 80 - - Emitter-base breakdown voltage V(BR)EBO 5 - - Collector cut-off current ICBO - - 1 Emitter cut-off current DC current gain IEBO - - 1 hFE 82 - 390 Collector-emitter saturation voltage VCE(sat) - - 0.4 Transition frequency fT - 100 - Output Capacitance COB - 20 - U.