Power Transistors
2SD1892
Silicon NPN triple diffusion planar type Darlington
For power amplification Complementary to ...
Power Transistors
2SD1892
Silicon NPN triple diffusion planar type Darlington
For power amplification Complementary to 2SB1252
10.0±0.2 5.5±0.2 2.7±0.2
4.2±0.2
7.5±0.2
s Features
q q q q
0.7±0.1
4.2±0.2
Unit: mm
14.0±0.5
Optimum for 35W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation
voltage VCE(sat): <2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 120 100 5 8 5 45 2 150 –55 to +150 Unit V V V A A W
16.7±0.3
φ3.1±0.1
4.0
1.4±0.1
1.3±0.2
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
0.8±0.1
0.5 –0.1
+0.2
2.54±0.25 5.08±0.5 1 2
1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a)
3
Internal Connection
C B
˚C ˚C
E
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter
voltage Forward current transfer ratio Collector to emitter saturation
voltage Base to emitter saturation
voltage Transition frequency Turn-on time Storage time Fall time
*h FE2
(TC=25˚C)
Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 120V, IE = 0 VCE = 100V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 4A IC = 4A, IB = 4...