STB9NK60ZFD Datasheet

STB9NK60ZFD N-Channel Enhancement Mode MOSFET

The Fast SuperMESH™ series associates all advantages of reduced on-resistance, zener gate protection and very goog dv/dt capability with a Fast body-drain recovery diode. Such series complements the “FDmesh™” Advanced Technology. APPLICATIONS s HID BALLAST s ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS O.

Features

OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/9 STP9NK60ZFD - STP9NK60ZFDFP - STB9NK60ZFD ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON.