STB9NK60Z, STP9NK60Z, STP9NK60ZFP
N-channel 600 V, 0.85 Ω typ., 7 A Zener-protected SuperMESH™ Power MOSFET in D²PAK, T...
STB9NK60Z, STP9NK60Z, STP9NK60ZFP
N-channel 600 V, 0.85 Ω typ., 7 A Zener-protected SuperMESH™ Power
MOSFET in D²PAK, TO-220 and TO-220FP packages
Datasheet − production data
Features
Order codes STB9NK60ZT4
STP9NK60Z STP9NK60ZFP
VDS RDS(on) max ID PTOT
600 V
125 W 0.95 Ω 7 A
30 W
■ Extremely high dv/dt capability ■ Improved ESD capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances
TAB
3 1
D2PAK
TAB
3 2 1
TO-220
3 2 1
TO-220FP
Applications
■ Switching applications
Figure 1. Internal schematic diagram , TAB
Description
These devices are N-channel Zener-protected Power
MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
SC15010
Table 1. Device summary Order codes
STB9NK60ZT4 STP9NK60Z
STP9NK60ZFP
Marking B9NK60Z P9NK60Z P9NK60ZFP
Package D2PAK TO-220 TO-220FP
Packaging Tube
January 2013
This is information on a product in full production.
Doc ID 8799 Rev 3
1/19
www.st.com
19
Contents
Contents
STB9NK60Z, STP9NK60Z, STP9NK60ZFP
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical cha...