Q62702-C311-V4 Datasheet

Q62702-C311-V4 PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage)

PNP Silicon AF Transistors BC 327 BC 328 High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 337, BC 338 (NPN) q 2 3 1 Type BC 327 BC 327-16 BC 327-25 BC 327-40 BC 328 BC 328-16 BC 328-25 BC 328-40 Marking – Ordering Code Q62702-C311 Q.

Features

A mA mW ˚C
  – 65 … + 150 200 135 K/W 1) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group 2 BC 327 BC 328 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 327 BC 328 Collector-base breakdown voltage IC = 100 µA BC 327 BC 328 Emitter-base breakdown voltage IE = 10 µA Collector cutoff current VCB = 25 V VCB = 45 V VCB = 25 V, TA = 150 ˚C VCB = 45 V, TA = 150 ˚C Emitter cutoff current VEB = 4 V DC current gain1) IC = 100 mA; VCE = 1 V BC 327/16; BC 328/16 BC 3.